Title: Growth of perfect GaAs epitaxial layers on a silicon substrate

Abstract

In order to grow GaAs epitaxial layers on a relatively inexpensive Si substrate, an environmentally friendly liquid phase epitaxy method was used. For this purpose, Si1-xGex epitaxial layers were first grown on the Si substrate as a buffer layer ("bridge"). Because the unit crystal lattice constants of Ge and GaAs are very close (aGe=5.658 Å, aGaAs=5.653 Å), it is easy to grow GaAs epitaxial layers on Si1-xGex epitaxial layers. Using this Si1-xGex buffer layer, GaAs epitaxial layer production was achieved in one-step technological conditions. Under different technological conditions (during the growth of epitaxial layers, the temperature range is 1050-600°C, the forced cooling rate is 0.5-1.5°C/min, and the distance between horizontal substrates is 0.5-1.5 mm (consists of.) the growth direction of the grown Si1-xGex epitaxial layers and the dislocation density at the substrate-film interface, the reasons for the occurrence of dislocations, as well as the chemical composition of the surface were studied. Under selected optimal growth conditions, the dislocation density was reduced to 4.103 cm-2. The samples had photosensitivity over a wide range of photon energies (1-2 eV), including the intrinsic absorption bands of contact semiconductors. Optimal process regimes for growing perfectly crystalline epitaxial layers and structures are reported. Based on the results of the above research, it was possible to obtain the Si-Si1- xGex -Si1-x-yGexSn y structure. Si1-xGex can be used as a buffer layer to mitigate the lattice mismatch between the substrate and the film when creating new heterostructures in the future. Including Si-Si1-xGex -(Ge2)1- x(ZnSe)x, Si–Si1–xGex –ZnSe, Si–Si1–xGex – (Ge2)1–x–y(GaAs)x(ZnSe)y , Si–SixGe1–x–Ge1–xSnx, Si-Si1-xGex -Al1-xGaxAs, Si-Si1-xGex -Al1-xGaxP can open wide possibilities for obtaining heterostructures. This should improve the structural quality of heterostructures, which is an important physical factor in semiconductor device fabrication.